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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 6.0+/-0.15 RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
4.9+/-0.15
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
1.0+/-0.05
2
FEATURES
High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
3
(0.25)
INDEX MARK (Gate)
APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter "G" after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS1B
MITSUBISHI ELECTRIC 1/8
22 Mar 2007
3.5+/-0.05
2.0+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
UNIT V V W W A
C C C/W
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS 30 +/- 20 50 1.5 3 150 -40 to +125 2.5
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout1 D1 Pout2 D2 PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance
(Tc=25C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(Pin Control) f=175MHz,Idq=700mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.2V,Po=7W(Pin Control) f=520MHz,Idq=750mA,Zg=50 Load VSWR=20:1(All Phase) MIN 1.4 7 55 7 50 LIMITS TYP MAX. 200 1 1.7 2.4 8 60 8 55 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD07MVS1B
MITSUBISHI ELECTRIC 2/8
22 Mar 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
Vgs-Ids CHARACTERISTICS 10.0
Ta=+25C Vds=10V
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
60 CHANNEL DISSIPATION Pch(W (W) 50 40
On PCB(*1) with Heat-sink
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
8.0
Ids
Ids(A),GM(S)
6.0
30 20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(deg:C.)
On PCB(*1)
4.0
GM
2.0 0.0 0 1 2 3 Vgs(V) 4 5
Vds-Ids CHARACTERISTICS 10 9 8 7 Ciss(pF) 6 Ids(A) 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10
Vgs=3.5V Vgs=3V Vgs=4V Vgs=4.5V Ta=+25C Vgs=5V
Vds VS. Ciss CHARACTERISTICS 160 140 120 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Coss CHARACTERISTICS 120 100 80 Coss(pF) Crss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD07MVS1B
MITSUBISHI ELECTRIC 3/8
22 Mar 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
14 Pin-Po CHARACTERISTICS @f=175MHz
Po
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz 40 Po(dBm) , Gp(dB) , Idd(A)
Ta=+25C f=175MHz Vdd=7.2V Idq=700mA Po
100 90 80
80
12 Pout(W) , Idd(A) 10
30
Gp
60 d(%)
d
20
40
6 4
Idd
Ta=25C f=175MHz Vdd=7.2V Idq=700mA
60 50 40
10
20
2 0 0 0 500 Pin(mW)
0 -5 0 5 10 15 20 Pin(dBm) 25 30
30 1000
Pin-Po CHARACTERISTICS @f=520MHz 40 Po(dBm) , Gp(dB) , Idd(A)
Ta=+25C f=520MHz Vdd=7.2V Idq=750mA Po
14 80 12 Pout(W) , Idd(A) 10 8 6 4 2 0 0 0.0
Pin-Po CHARACTERISTICS @f=520MHz
100 90 80
Po
30
60 d(%)
d Ta=25C f=520MHz Vdd=7.2V Idq=750mA Idd
20
Gp
40
60 50 40 30 1.5
10
20
0 0 5 10 15 20 Pin(dBm) 25 30
0.5 Pin(W)
1.0
30 25 20 Po(W) 15 10 5 0 4
Vdd-Po CHARACTERISTICS @f=175MHz
Ta=25C f=175MHz Pin=0.3W Icq=700mA Zg=ZI=50 ohm Po
6 5 4 Idd(A) Po(W)
Idd
25 20 15 10 5 0 4
Vdd-Po CHARACTERISTICS @f=520MHz
Ta=25C f=520MHz Pin=0.7W Icq=750mA Zg=ZI=50 ohm Po
5 4
Idd
3 2 1 0 6 8 10 Vdd(V) 12 14
2 1 0 6 8 10 Vdd(V) 12 14
RD07MVS1B
MITSUBISHI ELECTRIC 4/8
22 Mar 2007
Idd(A)
3
d(%)
70
d(%)
8
70
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
V dd
C1 W 19m m 4.7kO HM R F-in 19.5m m 24.5m m R D07MV S1 175MHz
19mm W 22pF L
C2
10uF,50V
1mm 11.5m m 3m m 68O HM
6.5m m 28.5m m 3.5m m 11.5m m
10m m
5m m RF -out
62pF 16pF 56p F
5mm 62p F 140pF 100pF
22pF 180pF
L: E nam eled wire 7Turns,D:0.43m m ,2.46m m O.D C 1,C2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m W :line width=1.0m m
TEST CIRCUIT(f=520MHz)
Vgg Vdd
C1 W 19m m 4.7kO HM RF-in 46m m 68pF 37pF 10pF 20pF 6pF 18pF 9m m RD07MVS1 520MHz 3.5m m 3.5m m 3.5m m 20pF 19m m W L 6.5m m 6.5m m
C2
10uF,50V
44.5m m RF-out 68pF
L: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D C1,C2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50OHM,er:2.7,t=0.8m m W :ine width=1.0m m
RD07MVS1B
MITSUBISHI ELECTRIC 5/8
22 Mar 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout* Zo=10
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance output impedance
175MHz Zout*
520MHz Zin* Zout* Zo=10
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*=0.76+j0.06 Zout*=1.61-j0.52
520MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance input impedance
520MHz Zout*
RD07MVS1B
MITSUBISHI ELECTRIC 6/8
22 Mar 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
S12 S22 (ang) -14.2 -20.6 -23.4 -26.8 -29.8 -36.7 -42.2 -47.7 -52.2 -55.2 -57.6 -57.8 -59.8 -61.0 -62.4 -63.3 -63.4 -63.4 -61.4 -59.7 -59.3 -54.8 -47.5 -34.8 -14.2 (mag) 0.767 0.773 0.774 0.788 0.810 0.829 0.842 0.871 0.878 0.895 0.907 0.907 0.908 0.910 0.925 0.925 0.933 0.939 0.940 0.944 0.948 0.947 0.952 0.951 0.952 (ang) -170.7 -172.2 -172.4 -172.4 -172.4 -173.0 -173.6 -174.6 -175.3 -176.3 -177.1 -177.4 -177.4 -177.8 -178.8 -179.3 180.0 179.4 179.1 178.3 178.3 177.7 177.2 177.2 176.5 (mag) 0.018 0.017 0.017 0.016 0.016 0.015 0.013 0.012 0.011 0.009 0.008 0.008 0.007 0.007 0.006 0.005 0.005 0.004 0.003 0.003 0.002 0.002 0.001 0.001 0.001
RoHS Compliance,
Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.881 0.885 0.888 0.891 0.896 0.904 0.914 0.922 0.929 0.934 0.939 0.941 0.941 0.944 0.947 0.950 0.953 0.953 0.956 0.955 0.958 0.959 0.959 0.959 0.959 (ang) -174.0 -175.5 -176.0 -176.6 -177.1 -178.0 -178.8 -179.7 179.6 178.8 178.0 177.8 177.7 177.4 176.7 176.1 175.5 174.9 174.5 174.1 173.6 173.4 172.9 172.7 172.5 (mag) 6.055 4.358 3.844 3.207 2.749 2.069 1.602 1.288 1.043 0.864 0.724 0.678 0.660 0.616 0.529 0.458 0.401 0.351 0.314 0.279 0.250 0.225 0.204 0.186 0.170
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
S21 (ang) 75.9 68.8 66.2 62.8 59.3 51.8 46.2 40.5 35.7 31.8 27.7 26.4 26.0 24.7 21.7 19.1 16.8 14.4 12.6 10.9 9.1 8.1 6.3 5.3 3.9
RD07MVS1B S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
RD07MVS1B S-PARAMETER DATA (@Vdd=12.5V, Id=750mA)
Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 800 850 900 950 1000 1050 1100
RD07MVS1B
S11 (mag) 0.880 0.884 0.886 0.891 0.897 0.907 0.916 0.926 0.932 0.938 0.943 0.944 0.944 0.946 0.950 0.952 0.954 0.955 0.957 0.956 0.958 0.958 0.959 0.960 0.959 (ang) -172.4 -174.2 -174.9 -175.5 -176.1 -177.2 -178.1 -179.2 179.9 179.1 178.3 178.0 177.9 177.5 176.8 176.3 175.5 175.0 174.6 174.1 173.7 173.4 173.0 172.6 172.4 (mag) 6.708 4.812 4.237 3.523 3.008 2.249 1.729 1.383 1.114 0.918 0.769 0.716 0.698 0.651 0.557 0.480 0.420 0.368 0.326 0.291 0.260 0.235 0.212 0.193 0.177
S21 (ang) 75.3 67.7 64.9 61.2 57.5 49.7 43.9 38.2 33.3 29.3 25.4 24.0 23.6 22.3 19.3 16.7 14.5 12.1 10.3 8.8 7.0 5.7 4.1 3.2 1.9 (mag) 0.018 0.017 0.017 0.016 0.016 0.014 0.013 0.012 0.010 0.009 0.008 0.007 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.002 0.002 0.001 0.001 0.001 0.000
S12 (ang) -13.9 -21.0 -23.8 -26.9 -30.8 -38.8 -43.0 -49.1 -54.0 -57.3 -61.1 -61.2 -62.3 -63.6 -63.7 -66.5 -64.0 -65.9 -66.5 -62.7 -64.3 -62.3 -54.8 -27.4 10.8 (mag) 0.726 0.737 0.742 0.759 0.784 0.810 0.829 0.861 0.870 0.889 0.903 0.904 0.905 0.907 0.921 0.923 0.932 0.937 0.937 0.943 0.946 0.947 0.952 0.950 0.950
S22 (ang) -168.1 -169.4 -169.7 -169.7 -169.7 -170.5 -171.4 -172.5 -173.4 -174.6 -175.7 -176.0 -176.0 -176.5 -177.6 -178.1 -179.0 -179.7 179.9 179.2 179.0 178.5 177.9 178.0 177.1
22 Mar 2007
MITSUBISHI ELECTRIC 7/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1B
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD07MVS1B
MITSUBISHI ELECTRIC 8/8
22 Mar 2007

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